Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (0 0 1) Si substrate by metalorganic vapor phase epitaxy

✍ Scribed by Shigeyasu Tanaka; Yoshio Honda; Norifumi Kameshiro; Ryuta Iwasaki; Nobuhiko Sawaki; Takayoshi Tanji; Mikio Ichihashi

• Book ID: 108165608
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 409 KB
• Volume: 260
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2003.08.074