A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is
High-power passively Q-switched mode-locking Nd:GdVO4laser with LT-InGaAs saturable absorber
โ Scribed by Rui-Hua Wang; Xiu-Wei Fan; Hai-Xia Wang; Hai-Tao Huang; Li Zhu; Jing-Liang He
- Book ID
- 110208427
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 218 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1054-660X
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๐ SIMILAR VOLUMES
The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd:GdVO 4 laser with a low temperature In 0.25 Ga 0.75 As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable
By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the
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