A passively Q-switched mode-locking of continuous wave diode-pumped Tm,Ho:YVO4 laser by use of In-GaAs/GaAs as a saturable absorber is reported for the first time as the author's know. The maximum Q-switched mode-locking output power was 210 mW at a wavelength of 2.05 ΞΌm with pulse repetition freque
InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm:YAP laser
β Scribed by B. Q. Yao; W. Wang; Y. Tian; G. Li; Y. Z. Wang
- Book ID
- 110209228
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 223 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1054-660X
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π SIMILAR VOLUMES
A laser-diode-pumped passively Q-switched new type crystal Nd 3+ :NaY(WO4)2 (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for di erent output coupler re ectivities
The diode-pumped passively Q-switched and Qswitching mode-locked Yb:Y2Ca3B4O12 lasers with V:YAG as saturable absorber are demonstrated in this paper. In the Qswitched regime, an average output power of 150 mW is obtained under the absorbed pump power of 6.6 W; the pulse width is 46 ns with the puls