A laser-diode pumped passively Q-switched new type crystal Nd 3+ :NaY(WO 4 ) 2 (known as Nd:NYW) laser with Cr 4+ :YAG saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different small-signal transmission of Cr
Laser–diode-pumped passively Q-switched Nd3+:NaY(WO4)2 laser with GaAs saturable absorber
✍ Scribed by Shengzhi Zhao; Lei Chen; Hongming Zhao; Guiqiu Li; Lu Zhang; Kejian Yang
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 210 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0030-3992
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✦ Synopsis
A laser-diode-pumped passively Q-switched new type crystal Nd 3+ :NaY(WO4)2 (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for di erent output coupler re ectivities are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.
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By using xenon ash lamp as pump source and Cr 4+ :YAG as passive Q-switcher, we have performed the Q-switched laser operation at 1:06 m with an Nd 3+ :NaY(WO4)2 (known as Nd:NYW) crystal. Meanwhile, the pulse width, the single pulse energy and the repetition rate under di erent small-signal transmis
A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is
We have demonstrated a passively Q-switched operation of Nd:GdVO4 laser in which a GaAs crystal is used as the saturable absorber for the ÿrst time as far as we know. A maximum average output power of 1:64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion e cienc