A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is
A diode-pumped passively Q-switched Nd:GdVO4 laser with a GaAs saturable absorption
β Scribed by L.J. Qin; X.L. Meng; Ch.L. Du; L. Zhu; B.Ch. Xu; H.Zh. Xu; F.Y. Jiang; Z.Sh. Shao
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 187 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0030-3992
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β¦ Synopsis
We have demonstrated a passively Q-switched operation of Nd:GdVO4 laser in which a GaAs crystal is used as the saturable absorber for the ΓΏrst time as far as we know. A maximum average output power of 1:64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion e ciency and peak power were 13.7% and 116:8 W, respectively. The maximum peak energy obtained in the experiment by 50% transmission couple was 19 J.
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A laser-diode-pumped passively Q-switched new type crystal Nd 3+ :NaY(WO4)2 (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for di erent output coupler re ectivities
A diode-pumped Nd : YVO4 laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the in uence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse proΓΏle, pulse energy