Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber
β Scribed by Lei Pan; Xueyuan Hou; Yufei Li; Yuming Sun
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 207 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0030-3992
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β¦ Synopsis
A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47:6 mJ are obtained when the pump energy is 9:45 J. The highest dynamic-static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.
π SIMILAR VOLUMES
By using a new saturable absorber V 3+ :YAG, a flashlamp-pumped passively Q-switched Nd:GdVO 4 laser at 1.34 Β΅m has been realized. Both a-cut and c-cut Nd:GdVO4 crystals are used. The output single-pulse energy and the pulse width versus the pump energy for different initial transmissions of V 3+ :Y
We have demonstrated a passively Q-switched operation of Nd:GdVO4 laser in which a GaAs crystal is used as the saturable absorber for the ΓΏrst time as far as we know. A maximum average output power of 1:64 W was obtained at an incident pump power of 12 W, the corresponding optical conversion e cienc
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