A passively Q-switched mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser with a low-temperature (LT)-GaAs saturable absorber mirror was realized. Q-switched mode-locking pulses laser with about 100% modulation depth was obtained at the pump power of 3 W and the mode-lock pulse tra
Passively Q-switched mode-locked Nd3+:LuVO4 laser by LT-GaAs saturable absorber
โ Scribed by M. Li; S. Zhao; Y. Li; K. Yang; G. Li; D. Li; J. An; T. Li; Z. Yu
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 90 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1612-2011
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โฆ Synopsis
By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the passively Q-switched pulse envelops ranges from 37.5 to 139 kHz as the pump power increased from 1.7 to 8.2 W. The mode-locked pulse inside the Q-switched envelop has an estimated pulse width of about 220 ps and a repetition rate of 111 MHz. Under an incident pump power of 8.2 W, the highest pulse energy of 6 ฮผJ of each Q-switched envelope, and the highest peak power about 2.73 kW of Q-switched mode-locked pulses can be obtained.
Output power, W 2.0 2.5 1.
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