A passively mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser was realized with a low temperature (LT) In~0.25~Ga~0.75~As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continu
Diode-pumped passively mode-locked Nd:LuVO4 laser with LT-In0.25Ga0.75As saturable absorber
โ Scribed by T. Li; S. Zhao; Y. Li; Z. Zhuo; K. Yang; G. Li; D. Li; Z. Yu
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 86 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1612-2011
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โฆ Synopsis
A diode pumped passively mode-locked Nd:LuVO 4 laser with a low temperature (LT) In0.25Ga0.75As absorber is realized in this paper. An In 0.25 Ga 0.75 As single-quantum-well absorber, which is grown by use of the metal-organic chemicalvapor deposition technique, acts as nonlinear absorber and output coupler simultaneously. A special cavity is designed to keep the power density on In 0.25 Ga 0.75 As under its damage threshold. Both the Q-switched and continuous-wave (cw) mode locking operation are experimentally realized. An average output power of 5.9 W with pulse width of 4.9 ps is achieved at the pump power of 22 W, corresponding to an optical conversion efficiency of 26.8%.
๐ SIMILAR VOLUMES
A passively Q-switched mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser with a low-temperature (LT)-GaAs saturable absorber mirror was realized. Q-switched mode-locking pulses laser with about 100% modulation depth was obtained at the pump power of 3 W and the mode-lock pulse tra
By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the
A diode-pumped doubly passively Q-switched Nd:LuVO4 laser with Cr 4+ :YAG saturable absorber and GaAs output coupler is realized. This laser can generate a shorter and more symmetric pulse profile when compared with pure GaAs. By using two Cr 4+ :YAG saturable absorbers with different small-signal t
A passively Q-switched mode-locking of continuous wave diode-pumped Tm,Ho:YVO4 laser by use of In-GaAs/GaAs as a saturable absorber is reported for the first time as the author's know. The maximum Q-switched mode-locking output power was 210 mW at a wavelength of 2.05 ฮผm with pulse repetition freque
The continuous wave (CW) and passively Qswitched Nd:Gd3AlxGa5-xO12 (Nd:GAGG) laser operation at 938 nm have been realized for the first time. The maximum CW output power of 0.44 W was obtained under the absorbed pump power of 8.54 W, corresponding to the slope efficiency of 7.8% and optical-to-optic