A passively Q-switched mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser with a low-temperature (LT)-GaAs saturable absorber mirror was realized. Q-switched mode-locking pulses laser with about 100% modulation depth was obtained at the pump power of 3 W and the mode-lock pulse tra
InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm,Ho:YVO4 laser
โ Scribed by G. Li; B.Q. Yao; P.B. Meng; W. Wang; Y.L. Ju; Y.Z. Wang
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 283 KB
- Volume
- 8
- Category
- Article
- ISSN
- 1612-2011
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โฆ Synopsis
A passively Q-switched mode-locking of continuous wave diode-pumped Tm,Ho:YVO4 laser by use of In-GaAs/GaAs as a saturable absorber is reported for the first time as the author's know. The maximum Q-switched mode-locking output power was 210 mW at a wavelength of 2.05 ฮผm with pulse repetition frequency of 16.32 kHz.
Output power, W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.
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