A diode-pumped actively Q-switched and modelocked Nd:GdVO4 laser with great average output power and high efficiency was realized by using a comparative simple configuration and a short cavity length. The laser generates stable mode-locked pulses of estimated width 240 ps lying underneath a Q-switch
Experiments of a diode-pumped Nd:GdVO4/LT-GaAs Q-switched and mode-locked laser
โ Scribed by J. Yang; Q. Fu; J. Liu; Y. Wang
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 124 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1612-2011
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โฆ Synopsis
A diode-pumped passively Q-switched mode-locked (QML)
Nd:GdVO~4~ laser with a low temperature GaAs (LT-GaAs) saturable
absorber is presented. The maximal Q-switched mode-locked average
output power was 798 mW with the Q-switched envelop having a
repetition rate of 125 kHz. The mode-locked pulse trains inside
the Q-switched pulse envelope had a repetition rate of โผ
750 MHz. The laser properties of the operational parameters on
the pump power were also investigated experimentally.
๐ SIMILAR VOLUMES
A passively Q-switched mode-locked all-solid-state YVO~4~/Nd:YVO~4~ composite crystal laser with a low-temperature (LT)-GaAs saturable absorber mirror was realized. Q-switched mode-locking pulses laser with about 100% modulation depth was obtained at the pump power of 3 W and the mode-lock pulse tra
We demonstrate a diode-pumped passively Q-switched and mode-locking intracavity frequency-doubled Nd:GdVO~4~/KTP green laser with a Cr^4+^:YAG saturable absorber. Nearly 95% modulation depth for the mode-locked pulses inside the Q-switched envelope has been obtained. The Q-switched envelope pulses w
By using LT-GaAs as saturable absorber, we have demonstrated the stable Q-switched and mode-locked (QML) Nd:LuVO 4 laser run in a Z-type folded cavity. Nearly 100% modulation depth of mode locking can be obtained as long as the pump power reaches the oscillation threshold. The repetition rate of the
A passively Q-switched mode-locking of continuous wave diode-pumped Tm,Ho:YVO4 laser by use of In-GaAs/GaAs as a saturable absorber is reported for the first time as the author's know. The maximum Q-switched mode-locking output power was 210 mW at a wavelength of 2.05 ฮผm with pulse repetition freque