A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO~4~ laser with a low temperature GaAs (LT-GaAs) saturable absorber is presented. The maximal Q-switched mode-locked average output power was 798 mW with the Q-switched envelop having a repetition rate of 125 kHz. The mode-locked pulse trai
Diode-pumped actively Q-switching and mode-locking Nd:GdVO4 laser
β Scribed by M. Li; S. Zhao; K. Yang; G. Li; D. Li; J. An
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 114 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1612-2011
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β¦ Synopsis
A diode-pumped actively Q-switched and modelocked Nd:GdVO4 laser with great average output power and high efficiency was realized by using a comparative simple configuration and a short cavity length. The laser generates stable mode-locked pulses of estimated width 240 ps lying underneath a Q-switched envelope of width 170 ns with a Q-switch modulation frequency of 10 kHz. The modulation depth was more than 90% and the mode-locked pulse inside the Q-switched pulse has a repetition rate of 390 MHz. T Ch1 20.0mV M ACh1 68.0mV 100ns
Oscilloscope traces of a typical actively Q-switched and modelocked laser pulse envelope at the incident pump power of 2.1 W and the pulse repetition of 10 kHz
π SIMILAR VOLUMES
We demonstrate a diode-pumped passively Q-switched and mode-locking intracavity frequency-doubled Nd:GdVO~4~/KTP green laser with a Cr^4+^:YAG saturable absorber. Nearly 95% modulation depth for the mode-locked pulses inside the Q-switched envelope has been obtained. The Q-switched envelope pulses w
6 W of output power and near 50% slope efficiency with respect to absorbed pump power was demonstrated in free-running mode for a short, 40-mm long resonator. The uncoated, with 3.5% dopant of thulium YLF rod of β 3 Γ 8 mm size wrapped with indium foil was mounted in copper heat-sink maintaining 293
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