A laser-diode-pumped passively Q-switched new type crystal Nd 3+ :NaY(WO4)2 (known as Nd:NYW) laser with GaAs semiconductor saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for di erent output coupler re ectivities
Laser-diode pumped passively Q-switched Nd3+:NaY(WO4)2 laser with Cr4+:YAG saturable absorber
β Scribed by Shengzhi Zhao; Lei Chen; Hongming Zhao; Guiqiu Li; Lu Zhang; Zhenxiang Chen; Huanchu Chen; Kejian Yang
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 306 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0925-3467
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β¦ Synopsis
A laser-diode pumped passively Q-switched new type crystal Nd 3+ :NaY(WO 4 ) 2 (known as Nd:NYW) laser with Cr 4+ :YAG saturable absorber has been realized. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on pump power for different small-signal transmission of Cr 4+ :YAG are measured. The coupled rate equations are used to simulate the Qswitched process of laser, and the numerical solutions agree with the experimental results.
π SIMILAR VOLUMES
By using xenon ash lamp as pump source and Cr 4+ :YAG as passive Q-switcher, we have performed the Q-switched laser operation at 1:06 m with an Nd 3+ :NaY(WO4)2 (known as Nd:NYW) crystal. Meanwhile, the pulse width, the single pulse energy and the repetition rate under di erent small-signal transmis
A diode-pumped doubly passively Q-switched Nd:LuVO4 laser with Cr 4+ :YAG saturable absorber and GaAs output coupler is realized. This laser can generate a shorter and more symmetric pulse profile when compared with pure GaAs. By using two Cr 4+ :YAG saturable absorbers with different small-signal t
The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr 4+ :YAG saturable absorber. T