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Passively Q-switched diode-pumped Cr4+:YAG/Nd3+:GdVO4 monolithic microchip laser

✍ Scribed by Sebastien Forget; Frederic Druon; François Balembois; Patrick Georges; Nicolas Landru; Jean-Philippe Fève; Jiali Lin; Zhiming Weng

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
166 KB
Volume
259
Category
Article
ISSN
0030-4018

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✦ Synopsis

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr 4+ :YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO 4 optically contacted on a 0.4 mm long Cr 4+ :YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.

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