High power passively Q-switched Nd:GdVO4 lasers
β Scribed by S.P. Ng; D.Y. Tang; L.J. Qin; X.L. Meng
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 201 KB
- Volume
- 229
- Category
- Article
- ISSN
- 0030-4018
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π SIMILAR VOLUMES
A xenon ash-lamp-pumped, passively Q-switched Nd:GdVO4 laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9:45 J. The dynamic laser has the highest slope e ciency when the GaAs wafer is
A compact diode-pumped passively Q-switched intracavity frequency-doubled Nd:GdVO4=KTP green-pulse laser was demonstrated, using Cr 4+ :YAG as a saturable absorber in a simple at-at cavity. With a 5:9 W incident pump power, a passively Q-switched green laser was obtained with an average power of 397
The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO 4 crystal and a Cr 4+ :YAG saturable absorber. T