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High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber

✍ Scribed by S.D. Pan; L.N. Zhao; Y. Yuan; S.N. Zhu; J.L. He; Y.G. Wang

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 366 KB
Volume: 31
Category: Article
ISSN: 0925-3467
DOI: 10.1016/j.optmat.2009.01.004

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✦ Synopsis

The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd:GdVO 4 laser with a low temperature In 0.25 Ga 0.75 As saturable absorber, which was grown by the metal-organic chemical-vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455 MHz and 12 ps, respectively. The average output power was 1.8 W and the slope efficiency was 36%.

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