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High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors

✍ Scribed by Fareed, R. S. Qhalid; Hu, X.; Tarakji, A.; Deng, J.; Gaska, R.; Shur, M.; Khan, M. A.

Book ID
127273322
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
375 KB
Volume
86
Category
Article
ISSN
0003-6951

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AlGaN/GaInN/GaN heterostructure field-ef
AlGaN/GaInN/GaN heterostructure field-effect transistor
✍ Ikki, Hiromichi ;Isobe, Yasuhiro ;Iida, Daisuke ;Iwaya, Motoaki ;Takeuchi, Tetsu 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 428 KB

## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,