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High-performance Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by gas-source MBE

✍ Scribed by Yo-Sheng Lin; Shey-Shi Lu; Yo-Jen Wang

Book ID
114536852
Publisher
IEEE
Year
1997
Tongue
English
Weight
317 KB
Volume
44
Category
Article
ISSN
0018-9383

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S-band MMIC amplifier using Ga0.51In0.49
S-band MMIC amplifier using Ga0.51In0.49P/GaAs MISFETS as active devices
✍ Yo-Sheng Lin; Shey-Shi Lu; Lan Hai; Pei-Zen Chang πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 213 KB πŸ‘ 1 views

The first MMIC amplifier using Ga In PrGaAs 0 .51 0 .49 MISFETs grown by GSMBE as acti¨e de¨ices was fabricated in our laboratory. This monolithic amplifier achie¨ed a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were c