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S-band MMIC amplifier using Ga0.51In0.49P/GaAs MISFETS as active devices

✍ Scribed by Yo-Sheng Lin; Shey-Shi Lu; Lan Hai; Pei-Zen Chang


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
213 KB
Volume
20
Category
Article
ISSN
0895-2477

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✦ Synopsis


The first MMIC amplifier using Ga In PrGaAs 0 .51 0 .49 MISFETs grown by GSMBE as acti¨e de¨ices was fabricated in our laboratory. This monolithic amplifier achie¨ed a gain of 9.2 dB associated with an input VSWR of 1.4 and an output VSWR of 1.35 at the center frequency 2.4 GHz. These results were consistent with simulated results, and demonstrated the high potential of the applications of Ga In PrGaAs MISFETs to MMICs. ᮊ 1999 John Wiley & 0 .51 0 .49