๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy

โœ Scribed by N. Xiang; A. Tukiainen; M. Pessa; J. Dekker; J. Likonen

Book ID
110390149
Publisher
Springer US
Year
2002
Tongue
English
Weight
328 KB
Volume
13
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Fabrication and characteristics of In0.4
Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy
โœ S.F. Yoon; B.P. Gay; H.Q. Zheng; K.S. Ang; H. Wang; G.I. Ng ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 313 KB

In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2 /Vs and 3