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High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels

✍ Scribed by Choi, C.-S.; Kang, H.-S.; Woo-Young Choi; Kim, H.-J.; Choi, W.-J.; Kim, D.-H.; Jang, K.-C.; Seo, K.-S.

Book ID: 119800420
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 236 KB
Volume: 15
Category: Article
ISSN: 1041-1135
DOI: 10.1109/lpt.2003.811339

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