✦ LIBER ✦

Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

✍ Scribed by Jiang, C. P.; Huang, Z. M.; Li, Z. F.; Yu, J.; Guo, S. L.; Lu, W.; Chu, J. H.; Cui, L. J.; Zeng, Y. P.; Zhu, Z. P.; Wang, B. Q.

Book ID: 118147053
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 352 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1396818

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Subband electron properties of highly do

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

✍ Jiang, C. P.; Huang, Z. M.; Guo, S. L.; Chu, J. H.; Cui, L. J.; Zeng, Y. P.; Zhu 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 343 KB

Silicon doping effects on optical proper

Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures

✍ I. Dhifallah; M. Daoudi; A. Ouerghli; M. Oueslati; R. Chtourou 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 408 KB

Rapid thermal annealing effects on step-

Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

✍ Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Wu, J.; Zhu, Z. P.; Lin, L. Y. 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 370 KB

Correlation between optical and electric

Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

✍ Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Zhu, Z. P.; Guo, S. L.; Chu, J. H. 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 437 KB