Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

✍ Scribed by Jiang, C. P.; Huang, Z. M.; Guo, S. L.; Chu, J. H.; Cui, L. J.; Zeng, Y. P.; Zhu, Z. P.; Wang, B. Q.

• Book ID: 118147052
• Publisher: American Institute of Physics
• Year: 2001
• Tongue: English
• Weight: 343 KB
• Volume: 79
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1396625