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Optical characterization of InAlAs/InGaAs metamorphic high-electron mobility transistor structures with tensile and compressive strain

✍ Scribed by Chan, Ching-Hsiang; Ho, Ching-Hwa; Chen, Ming-Kai; Lin, Yu-Shyan; Huang, Ying-Sheng; Hsu, Wei-Chou


Book ID
118004200
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
708 KB
Volume
529
Category
Article
ISSN
0040-6090

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Using room-temperature surface photovoltage spectroscopy (SPS) we have characterized four GaAlAs=InGaAs=GaAs pseudomorphic high electron mobility transistor (pHEMT) structures with varied quantum well compositional proΓΏles fabricated by molecular beam epitaxy. Signals have been observed from every r