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InAlAs/InGaAs Metamorphic High Electron Mobility Transistors on GaAs Substrate: Influence of Indium Content on Material Properties and Device Performance

✍ Scribed by Cordier, Yvon; Bollaert, Sylvain; Zaknoune, Mohammed; Dipersio, Jean; Ferre, Denise

Book ID: 125901563
Publisher: Institute of Pure and Applied Physics
Year: 1999
Tongue: English
Weight: 542 KB
Volume: 38
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.38.1164

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