Experimental evidence for dislocation-related gettering in metamorphic InP∕InGaAs high electron mobility transistor (HEMT) structures on GaAs substrate

✍ Scribed by Liu, Yuwei; Wang, Hong

• Book ID: 120183491
• Publisher: American Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 334 KB
• Volume: 100
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.2222004