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High hole mobility in Si/Si1−xGex/Si p-type modulation-doped double heterostructures

✍ Scribed by Wang, P. J.; Meyerson, B. S.; Fang, F. F.; Nocera, J.; Parker, B.

Book ID
120816349
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
568 KB
Volume
55
Category
Article
ISSN
0003-6951

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We present a systematic theoretical study of the low-temperature (T = 0 K) quasi-twodimensional-hole gas mobility in strained p-Si/Si 0.8 Ge 0.2 /p-Si selectively doped double heterojunctions. Ionized-impurity (remote and background), interface-roughness and alloyscattering mechanisms are taken into