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Hole mobility measurements in heavily doped Si1-xGex strained layers

✍ Scribed by Carns, T.K.; Chun, S.K.; Tanner, M.O.; Wang, K.L.; Kamins, T.I.; Turner, J.E.; Lie, D.Y.C.; Nicolet, M.-A.; Wilson, R.G.

Book ID: 114535772
Publisher: IEEE
Year: 1994
Tongue: English
Weight: 1022 KB
Volume: 41
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.293358

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