✦ LIBER ✦

Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex

✍ Scribed by J. M. McGregor; T. Manku; J. -P. Noël; D. J. Roulston; A. Nathan; D. C. Houghton

Book ID: 112817796
Publisher: Springer US
Year: 1993
Tongue: English
Weight: 236 KB
Volume: 22
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02661384

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Hole mobility measurements in heavily do

Hole mobility measurements in heavily doped Si1-xGex strained layers

✍ Carns, T.K.; Chun, S.K.; Tanner, M.O.; Wang, K.L.; Kamins, T.I.; Turner, J.E.; L 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 1022 KB

Drift hole mobility in strained and unst

Drift hole mobility in strained and unstrained doped Si1-x Gex alloys

✍ Manku, T.; McGregor, J.M.; Nathan, A.; Roulston, D.J.; Noel, J.-P.; Houghton, D. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 711 KB

Carrier mobility and strain effect in he

Carrier mobility and strain effect in heavily doped p-type Si

✍ Lucia Romano; Riccardo De Bastiani; Cristina Miccoli; Gabriele Bisognin; Enrico 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 441 KB

High hole mobility in strained Ge channe

High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

✍ Masanobu Miyao; Eiichi Murakami; Hiroyuki Etoh; Kiyokazu Nakagawa; Akio Nishida 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 306 KB

Low temperature hole mobility in straine

Low temperature hole mobility in strained p-Si/Si1 − xGex/p-Si selectively doped double heterojunctions

✍ G. Hionis; G.P. Triberis 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 119 KB

We present a systematic theoretical study of the low-temperature (T = 0 K) quasi-twodimensional-hole gas mobility in strained p-Si/Si 0.8 Ge 0.2 /p-Si selectively doped double heterojunctions. Ionized-impurity (remote and background), interface-roughness and alloyscattering mechanisms are taken into

Empirical relationship between hall mobi

Empirical relationship between hall mobility and hole concentration in heavily doped p-type GaAs

✍ Dr. H. Neumann 📂 Article 📅 1990 🏛 John Wiley and Sons 🌐 English ⚖ 440 KB 👁 1 views