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Drift hole mobility in strained and unstrained doped Si1-x Gex alloys

โœ Scribed by Manku, T.; McGregor, J.M.; Nathan, A.; Roulston, D.J.; Noel, J.-P.; Houghton, D.C.


Book ID
114535247
Publisher
IEEE
Year
1993
Tongue
English
Weight
711 KB
Volume
40
Category
Article
ISSN
0018-9383

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Low temperature hole mobility in straine
โœ G. Hionis; G.P. Triberis ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 119 KB

We present a systematic theoretical study of the low-temperature (T = 0 K) quasi-twodimensional-hole gas mobility in strained p-Si/Si 0.8 Ge 0.2 /p-Si selectively doped double heterojunctions. Ionized-impurity (remote and background), interface-roughness and alloyscattering mechanisms are taken into