𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Arsenic diffusion in Si and strained SixGe1−x alloys at 1000 °C

✍ Scribed by Suresh Uppal; J.M. Bonar; Jing Zhang; A.F.W. Willoughby


Book ID
108215102
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
135 KB
Volume
114-115
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Diffusion and electrical activity of cop
✍ A Hattab; M.O Aboelfotoh; G Tremblay; F Meyer; J Kolodzey; H.J Osten; C Dubois 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 142 KB

We investigate copper diffusion in Si-rich Si Ge C (x,20%) and Ge-rich (x593%) Si Ge layers. 12x 2y x y 12x x The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations o

Uphill diffusion in ternary Ni–Re–Ru all
✍ R.A. Hobbs; M.S.A. Karunaratne; S. Tin; R.C. Reed; C.M.F. Rae 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 658 KB

The rates of interdiffusion of Re and Ru at 1000 and 1100 • C in binary diffusion couples with single phase face centred cubic (fcc) microstructures have been characterised and compared to their respective rates in the presence of one another in ternary Ni-Re-Ru couples. The diffusivity of Re in Ni