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Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system

โœ Scribed by Eberl, K.; Iyer, S. S.; Zollner, S.; Tsang, J. C.; LeGoues, F. K.


Book ID
118166745
Publisher
American Institute of Physics
Year
1992
Tongue
English
Weight
692 KB
Volume
60
Category
Article
ISSN
0003-6951

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Extention of the โ€œthree partial ratesโ€ m
โœ Dr. sc. H. Kรผhne ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 305 KB

## Abstract The previously published โ€œthreeโ€partial ratesโ€ model of Si~1โ€“__x__~Ge~__x__~ layer growth (Kรผhne 1992) has been extended for describing Si~1โ€“(__x__+__y__)~Ge~__x__~B~__y__~ ternary systems by taking additionally into account a partial rate of boron and a partial rate of boronโ€originated