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Si1-x-yGexCy growth and properties of the ternary system

โœ Scribed by A.R. Powell; K. Eberl; B.A. Ek; S.S. Iyer

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
373 KB
Volume
127
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES

Atomic structure and lattice dynamics of
Atomic structure and lattice dynamics of strain-compensated Si1-x-yGexCy layers
โœ H. Rรผcker; M. Methfessel; B. Dietrich; H.J. Osten; P. Zaumseil ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 185 KB

The local atomic structure and lattice dynamics are studied for strain-compensated \(\mathrm{Si}_{1-\mathrm{x}-\mathrm{y}} \mathrm{Ge}_{\mathrm{x}} \mathrm{C}_{\mathrm{y}}\) layers grown by molecular beam epitaxy on \(\mathrm{Si}\) (001) substrates. The layers were characterized by transmission elec

Extention of the โ€œthree partial ratesโ€ m
Extention of the โ€œthree partial ratesโ€ model to layer growth and composition of the ternary Si1โ€“(x+y)GexBy system
โœ Dr. sc. H. Kรผhne ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 305 KB

## Abstract The previously published โ€œthreeโ€partial ratesโ€ model of Si~1โ€“__x__~Ge~__x__~ layer growth (Kรผhne 1992) has been extended for describing Si~1โ€“(__x__+__y__)~Ge~__x__~B~__y__~ ternary systems by taking additionally into account a partial rate of boron and a partial rate of boronโ€originated