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Growth of Si1 − x − yGexCy multi-quantum wells: structural and optical properties

✍ Scribed by P. Boucaud; C. Guedj; F.H. Julien; E. Finkman; S. Bodnar; J.L. Regolini

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
506 KB
Volume
278
Category
Article
ISSN
0040-6090

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GaN on Si(111): From Growth Optimization
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✍ F. Semond; B. Damilano; S. Vézian; N. Grandjean; M. Leroux; J. Massies 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 171 KB 👁 2 views

In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity