Extention of the “three partial rates” model to layer growth and composition of the ternary Si1–(x+y)GexBy system
✍ Scribed by Dr. sc. H. Kühne
- Publisher
- John Wiley and Sons
- Year
- 1994
- Tongue
- English
- Weight
- 305 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The previously published “three‐partial rates” model of Si~1–x~Ge~x~ layer growth (Kühne 1992) has been extended for describing Si~1–(x+y)~Ge~x~B~y~ ternary systems by taking additionally into account a partial rate of boron and a partial rate of boron‐originated silicon deposition. Silicon deposition from a silane‐germane‐diborane‐helium gas mixture at T = 500°C and P~total~ = 0.2 Torr is clearly enhanced by the presence of germane though to a low degree only, but not by diborane. Germanium partial rate as well as boron partial rate depends linearly on the partial pressure of the respective source gas. For illustration the data published by Murase have been used.