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Influence of growth conditions on the incorporation of substitutional C in Si1-x-yGexCy alloy on Si by chemical vapor deposition using C2H4

✍ Scribed by N. Jiang; L. Zang; R.L. Jiang; S.M. Zhu; P. Han; X.B. Liu; X.M. Cheng; R.H. Wang; Y.D. Zheng; X.N. Hu; J.X. Fang

Publisher: Springer
Year: 1999
Tongue: English
Weight: 77 KB
Volume: 68
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s003390050923

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