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The combined effects of strain and heavy doping on the indirect band gap of Si and GexSi1−x alloys

✍ Scribed by S.C. Jain; T.J. Gosling; D.H.J. Totterdell; J. Poortmans; R.P. Mertens; R. Van Overstraeten


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
740 KB
Volume
34
Category
Article
ISSN
0038-1101

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The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat