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B diffusion in Si predamaged with Si+ or Ge+ and preannealed at 200–1000°C

✍ Scribed by Masataka Kase; Yoshio Kikuchi; Yuji Kataoka; Haruhisa Mori


Book ID
113283655
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
737 KB
Volume
74
Category
Article
ISSN
0168-583X

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