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High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructure

✍ Scribed by Masanobu Miyao; Eiichi Murakami; Hiroyuki Etoh; Kiyokazu Nakagawa; Akio Nishida


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
306 KB
Volume
111
Category
Article
ISSN
0022-0248

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