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Ultrafast intersubband scattering of holes in p-type modulation-doped Si1−xGex/Si multiple quantum wells

✍ Scribed by M Woerner; R.A Kaindl; M Wurm; K Reimann; T Elsaesser; C Miesner; K Brunner; G Abstreiter

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
139 KB
Volume
13
Category
Article
ISSN
1386-9477

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Intersubband absorption in modulation do
Intersubband absorption in modulation doped p-type Si1-xGex quantum wells: theory and experiment
✍ T. Fromherz; E. Koppensteiner; M. Helm; G. Bauer; J.F. Nützel; G. Abstreiter 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 226 KB

A study of intersubband infrared absorption in modulation doped p-type \(\mathrm{Si} / \mathrm{SiGe}\) quantum wells is presented for SiGe wells with thicknesses between \(22 \AA\) and \(64 \AA\) and \(\mathrm{Ge}\) contents in the range from \(23 \%\) to \(58 \%\). The peak positions of the absorpt