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Doping dependence of intersubband transitions in Si1−xGexSi multiple quantum wells

✍ Scribed by Gamani Karunasiri; Soo Jin Chua; Jin Suk Park; Kang L. Wang

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
305 KB
Volume
35
Category
Article
ISSN
0921-5107

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Intersubband transitions in strained Si/
Intersubband transitions in strained Si/Si1 − xGex/Si quantum wells
✍ Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 151 KB

The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained