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High-Frequency Electron Mobility in GaN

✍ Scribed by E.W.S. Caetano; J.A.P. da Costa; V.N. Freire


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
312 KB
Volume
216
Category
Article
ISSN
0370-1972

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✍ Hoshino, K. ;Someya, T. ;Arakawa, Y. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 95 KB πŸ‘ 2 views

We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the