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Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al[sub 2]O[sub 3] gate dielectric

✍ Scribed by Shahrjerdi, D.; Nah, J.; Hekmatshoar, B.; Akyol, T.; Ramon, M.; Tutuc, E.; Banerjee, S. K.

Book ID: 121652097
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 732 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3521284

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