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Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy

✍ Scribed by K. P. Lim; H. T. Pham; S. F. Yoon; A. Markwitz; N. Yakovlev

Book ID: 112182885
Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 346 KB
Volume: 3
Category: Article
ISSN: 1862-6254
DOI: 10.1002/pssr.200903229

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