✦ LIBER ✦

Influence of N incorporation on In content in GaInNAsâGaNAs quantum wells grown by plasma-assisted molecular beam epitaxy

✍ Scribed by Liu, H. F.; Xiang, N.; Chua, S. J.

Book ID: 120017674
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 807 KB
Volume: 89
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2335804

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of rapid thermal annealing on GaI

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

✍ Pan, Z.; Li, L. H.; Zhang, W.; Lin, Y. W.; Wu, R. H.; Ge, W. 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 358 KB

Annealing effects on the crystal structu

Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy

✍ A. Hierro; J. Ulloa; J. Chauveau; A. Trampert; M. Pinault; E. Tournié; A. Guzma 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 470 KB

Investigation of high In content InGaAs

Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy

✍ Lord, S.M.; Pezeshki, B.; Harris, J.S. 📂 Article 📅 1992 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 324 KB

Effect of nitrogen ions on the propertie

Effect of nitrogen ions on the properties of InGaAsN quantum wells grown by plasma-assisted molecular beam epitaxy

✍ Miguel-Sanchez, J.; Guzman, A.; Ulloa, J.M.; Hierro, A.; Munoz, E. 📂 Article 📅 2004 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 239 KB

Effects of plasma species on the N incor

Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy

✍ Ta-Chun Ma; Yan-Ting Lin; Hao-Hsiung Lin 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 234 KB

We report the effects of plasma species on the N incorporation of GaAsSbN. Optical emission spectroscopy and quadruple mass spectroscopy were used to characterize the plasma source. We found a simple correlation between the atomic N species and meta-stable molecular N 2 \* species that is independen

Absorption and Emission of (In,Ga)N/GaN

Absorption and Emission of (In,Ga)N/GaN Quantum Wells Grown by Molecular Beam Epitaxy

✍ Siozade, L. ;Disseix, P. ;Vasson, A. ;Leymarie, J. ;Damilano, B. ;Grandjean, N. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 85 KB 👁 2 views

Influence of N incorporation on In content in GaInNAsâGaNAs quantum wells grown by plasma-assisted molecular beam epitaxy

Influence of N incorporation on In content in GaInNAsâGaNAs quantum wells grown by plasma-assisted molecular beam epitaxy