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Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxy

✍ Scribed by A. Hierro; J. Ulloa; J. Chauveau; A. Trampert; M. Pinault; E. Tournié; A. Guzmán; J. L. Sánchez-rojas; E. Calleja

Book ID: 121800637
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 470 KB
Volume: 94
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1591416

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