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Investigation of high In content InGaAs quantum wells grown on GaAs by molecular beam epitaxy

โœ Scribed by Lord, S.M.; Pezeshki, B.; Harris, J.S.

Book ID
118237530
Publisher
The Institution of Electrical Engineers
Year
1992
Tongue
English
Weight
324 KB
Volume
28
Category
Article
ISSN
0013-5194

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Long-wavelength strained-layer InGaAs/Ga
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โœ T. Piwoล„ski; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiล„ski; B. Mroziewic ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 117 KB

## Abstract The operation in the 1020 nm wavelength range of strainedโ€layer InGaAs/GaAs separateโ€confinementโ€heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 ร… thick InGaAs quantum well with an indium content of 25%, which is close to cri