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The effects of laser irradiation on InGaAs/GaAs multiple quantum wells grown by metalorganic molecular beam epitaxy

✍ Scribed by H. K. Dong; S. C. H. Hung; C. W. Tu

Book ID
112817042
Publisher
Springer US
Year
1995
Tongue
English
Weight
787 KB
Volume
24
Category
Article
ISSN
0361-5235

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Γ… thick InGaAs quantum well with an indium content of 25%, which is close to cri