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Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

✍ Scribed by Tetsuya Takeuchi; Hiroshi Amano; Kazumasa Hiramatsu; Nobuhiko Sawaki; Isamu Akasaki

Book ID: 107790830
Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 307 KB
Volume: 115
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)90817-o

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