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Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer

✍ Scribed by Kobayashi, Nobuhiko P; Junko T. Kobayashi, ; Choi, Won-Jin; Daniel Dapkus, P; Zhang, Xingang; H. Rich, Daniel

Book ID: 108342700
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 199 KB
Volume: 189-190
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00221-8

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