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The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

✍ Scribed by Watanabe, A.; Takeuchi, T.; Hirosawa, K.; Amano, H.; Hiramatsu, K.; Akasaki, I.

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 297 KB
Volume: 128
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(93)90354-y

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